What question did this study set out to answer?

The aim is to investigate how vapor phase Ge incorporation and various reactions affect the performance and stability of Cu2Zn(Ge,Sn)Se4 solar cells.

April 10, 2026Open Access

Impact of vapor phase Ge incorporation and reaction pathways on the performance and stability of Cu 2 Zn(Ge,Sn)Se 4 solar cells

Key Points

The aim is to investigate how vapor phase Ge incorporation and various reactions affect the performance and stability of Cu2Zn(Ge,Sn)Se4 solar cells.
Examined the impact of Cu/Sn precursor ratio on composition shifts
Analyzed defects linked to SnSe2−x and GeSe2−x vapors
Applied post-deposition treatments to enhance performance
Achieved 12.5% solar cell efficiency at Ge/(Ge + Sn) = 9%
Identified a promising physical route for improving solar cell performance despite similar end compositions

Abstract

Composition shifts driven by the Cu/Sn precursor ratio and SnSe 2− x and/or GeSe 2− x vapor affect defects despite similar end compositions. Post-deposition treatment delivers 12.5% efficiency at Ge/(Ge + Sn) = 9%, showing a promising physical route.

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Authors

Talat Khonsor

David Nowak

Devendrá Pareek

Journals

Journal of Materials Chemistry A

Actions

Institutions

Universitat Politècnica de Catalunya

Carl von Ossietzky Universität Oldenburg

Institut de Recerca en Energia de Catalunya

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Building similarity graph...

Analyzing shared references across papers

Impact of vapor phase Ge incorporation and reaction pathways on the performance and stability of Cu 2 Zn(Ge,Sn)Se 4 solar cells

Key Points

Abstract

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Connected Papers

Discussion

Authors

Journals

Actions

Institutions

References and Citations

Citation Network

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