Optimized Beveled–Mesa–Trench Composite Structure for Advanced Schottky Barrier Diodes

In Schottky barrier diode (SBD), the electric field concentrates at the interface between the oxide layer and the drift layer, which can easily lead to premature breakdown of the SBD device. The drift layer is etched to form two structural designs a beveled mesa type and a trench type to shift the electric field concentration region at the Schottky contact interface to the bottom of the trench, based on the fourth‐generation ultra‐wide bandgap semiconductor material ‐GaO. This effectively suppresses the barrier‐lowering effect caused by image force. Furthermore, the trench MOS barrier Schottky diode is optimized in terms of two key parameters: trench width and tilt angle. The simulation results show that with a trench width of 6.2 m and a tilt angle of 64, the device achieves a breakdown voltage of 2179 V, a specific on‐resistance of 2.76 mcm, and a power figure of merit of 1.725 GW/cm, realizing excellent device performance with low on‐resistance and high breakdown voltage. Compared to conventional vertical SBDs, The breakdown voltage of the device was increased by 335.8%, the specific on‐resistance was reduced from 5.11 to 2.76 mcm, and the Baliga's figure of merit improved by 392.8%.