Electrical and Electronic Quality Improvement of Multicrystalline Silicon Solar Cells via Hydrogen Plasma Treatment

In this work, the impact of hydrogen plasma treatment on the electrical and electronic quality of multicrystalline silicon (mc-Si) was systematically investigated using plasma-enhanced chemical vapor deposition (PE-CVD). Hydrogen radicals generated in the plasma effectively passivate dangling bonds, reducing electrically active defects and enhancing material quality. Optimized PE-CVD conditions were applied to promote efficient hydrogen incorporation and surface modification. Optical characterization, including reflectivity measurements and FT-IR spectroscopy, confirms the formation of Si–H bonds and a significant reduction in surface reflectivity of up to 66% at 600 nm. Electrical and optoelectronic analyses reveal pronounced improvements in carrier lifetime and diffusion length, increased by 200% and 79%, respectively. In addition, dark current–voltage (I–V) measurements show a 32% decrease in series resistance and a 51% increase in shunt resistance, indicating enhanced charge transport and suppressed leakage currents. These macroscopic electrical improvements are supported by light beam-induced current (LBIC) measurements, which demonstrate a 14% increase in grain boundary current, confirming effective hydrogen passivation and reduced recombination. Overall, hydrogen plasma PE-CVD treatment is shown to significantly improve the electronic quality and photovoltaic performance of mc-Si solar cells.