December 1, 2007

Fast switching and long retention Fe-O ReRAM and its switching mechanism

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Abstract

A novel iron oxide (Fe-O) ReRAM is proposed and its high-speed resistance-switching of 10 ns is demonstrated. The switching mechanism is confirmed as a redox reaction between Fe 3 O 4 and y-Fe 2 O 3 . Based on this model, we have achieved long-retention characteristics by introducing Zn atoms to suppress the reduction process.

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Muraoka et al. (Sat,) studied this question.

www.synapsesocial.com/papers/69daaa2b84371aa676a3db7a — DOI: https://doi.org/10.1109/iedm.2007.4419063

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Authors

S. Muraoka

K. Osano

Yuchi Kanzawa

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Institutions

Panasonic (Japan)

Matsushita Memorial Hospital

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Fast switching and long retention Fe-O ReRAM and its switching mechanism

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