The study aims to explore how Mg dopant activation influences the two-dimensional hole gas characteristics at the p-GaN/AlGaN interface.
Analyzed the electrical properties of p-GaN/AlGaN/GaN heterojunctions.
Examined the activation level of Mg dopants in different growth conditions.
Assessed transport characteristics through electrical measurements.
The activation of Mg dopants significantly affects the mobility of the 2DHG.
Improved transport characteristics were observed with optimal dopant activation levels.
The correlation between dopant activation and hole density was established, indicating enhanced conductivity.
Abstract
This work investigates the correlation between the two-dimensional hole gas (2DHG) formed at the p-GaN/AlGaN interface and the activation of dopants in the p-GaN layer grown on top of the...