High-Bandwidth 940 nm VCSEL with Zn-Diffusion for Optical Communications

We present the simulation-guided design and experimental demonstration of high-speed 940 nm vertical-cavity surface-emitting lasers (VCSELs). Utilizing established device optimization principles, a simulation study was conducted focusing on the number of oxide layers and the aperture size, which predicted a maximum modulation bandwidth of over 35 GHz. To validate the simulation, a device with a 4-μm double-oxide aperture was fabricated and characterized. Additionally, a Zn-diffusion process was incorporated during fabrication to reduce p-DBR resistance and suppress higher-order transverse modes. The fabricated device achieved an experimental modulation bandwidth of 34 GHz and demonstrated successful 100 Gbit/s PAM-4 data transmission. The close agreement between the simulated and measured performance highlights the successful practical integration of these techniques for developing high-speed optical interconnects.