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Flexible RRAM utilizing CdSe Quantum dot-P4VP Composites and Graphene Layer | Synapse

April 10, 2026Open Access

Flexible RRAM utilizing CdSe Quantum dot-P4VP Composites and Graphene Layer

Key Points

This research aims to create a flexible resistive random-access memory (RRAM) for neuromorphic applications.
Developed a composite of CdSe quantum dots and P4VP
Integrated a graphene interfacial layer
Assessed the device's reliability and flexibility
Showed improved synaptic updates in a linear manner
Demonstrated enhanced reliability compared to traditional systems
Exhibited flexibility suitable for wearable technology

Abstract

We developed a flexible RRAM for neuromorphic systems using a CdSe Quantum Dot-P4VP(Poly-4-vinylpyridine) composite with a graphene interfacial layer for superior reliability and flexibility. Exhibiting linear synaptic updates, the device...

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Cite this study

Kim et al. (Thu,) studied this question.

synapsesocial.com/papers/69d893a86c1944d70ce049b8 — DOI: https://doi.org/10.1039/d5tc03937a

Authors

B

Boram Kim

University of Seoul

J

Jaeyoon Moon

National University

S

Seonjeong Lee

Journals

Journal of Materials Chemistry C

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