Overcoming Debye Length Limitations in Electrolyte‐Gated Transistor Biosensors Using Nanoscale‐Grooved Oxide Semiconductors Fabricated by Thermal Nanoimprint Lithography (Adv. Funct. Mater. 30/2026)

Electrolyte-Gated Transistor Biosensors The artwork visualizes a large-area, nanoscale-grooved IGO semiconductor platform fabricated via nanoimprint lithography (NIL). The design highlights how intense sensing signals are concentrated at the concave edges, where receptor–Tau interactions are maximized. These amplified signals are depicted as beams of light piercing through the Debye screening barrier (represented as dense fog), visually symbolizing a geometric breakthrough that enables the ultrasensitive detection of Alzheimer's biomarkers beyond conventional limits. More information can be found in the Research Article by Woo Lee, Eun-Ah You, Young-Geun Ha, and co-workers (10.1002/adfm.202527955).