This work presents the experimental observation of the weak antilocalization effect (WAL) in Bi2Te3 samples covered with CdTe grown on glass and GaAs (001) substrates using molecular beam epitaxy. We show that the amplitude of WAL is very close in both samples, which opens the possibility of the implementation of a low-cost device that operates via spin transport using a glass substrate. The experimental data were analyzed using the Hikami–Larkin–Nagaoka model, which provided the important parameters of dephasing and spin–orbit scattering lengths. Also, the structural characterization has evidenced that the samples present almost the same crystalline quality, indicating that van der Waals epitaxy can produce good quality Bi2Te3 layers independent of the chosen substrate.
Queiroz et al. (Wed,) studied this question.