The construction of two-dimensional (2D) heterostructures offers a novel strategy for modulating optoelectronic devices. In this work, we fabricated CuInP2S6(CIPS)/MoSe2ferroelectric heterostructures by scotch-tape method and investigated its optoelectronic properties. The detector shows a gate voltage tunable photoelectric response, the responsivity is improved by approximately 3902%, achieving a maximum of 5.57 A/W and the detectivity by 1785%, reaching 6.66 × 108Jones. Interestingly, upon the application of a gate voltage, the polarized electric field arising from ferroelectricity of CIPS enables the device to operate in a self-powered mode. Remarkably, the devices attained a high responsivity of 170.86 mA/W and a detectivity of 2.66 × 109Jones, respectively. Our research demonstrates that ferroelectric heterojunctions exhibit significant potential for application in self-powered photodetectors.
Pan et al. (Thu,) studied this question.