What question did this study set out to answer?

To investigate the Mie scattering effects in silicon-embedded germanium quantum dot arrays using Raman analysis.

February 2, 2026Nanoscale0 citations

Probing Mie scattering effects of Si-embedded Ge spherical QD arrays using Raman analysis

SYShaohua Yang MAMaria Isabel Alonso HLHorng-Chih Lin

Key Points

To investigate the Mie scattering effects in silicon-embedded germanium quantum dot arrays using Raman analysis.
Conducted experiments on SiGe quantum dot/Silicon Nitride micro-disk arrays
Applied Raman analysis to examine electromagnetic patterns
Measured near-field intensity enhancements in the samples
Demonstrated the significant enhancement of near-field intensity due to Mie scattering
Provided evidence of observable Mie scattering effects in the tested quantum dot arrays

Abstract

We reported experimental observation of Mie scattering effects of Si embedded Ge quantum dot (QD)/SiN micro-disk arrays as a result of a significant enhancement in the electromagenatic near-field intensity.

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Cite This Study

Yang et al. (Thu,) studied this question.

synapsesocial.com/papers/6980fd3cc1c9540dea80eed9 https://doi.org/https://doi.org/10.1039/d5nr05206h

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