Owing to their strong excitonic effects, monolayer transition metal dichalcogenides (1L TMDs) are highly promising for next-generation excitonic light-emitting devices. To enhance exciton emission, 1L TMDs are typically integrated with dielectric optical resonators, which, however, results in a large footprint and/or interface-induced exciton emission suppression. To overcome these fundamental issues, we herein present the experimental demonstration of nanoscale tungsten disulfide (WS2) excitonic light-emitting devices enabled by Mie voids. Such a Mie void not only supports a localized Mie resonance in the nanoscale air hole to enhance exciton emission but also suspends 1L WS2 in the air to eliminate the emission suppression from the contact interface. When we leverage the nanoscale field localization within Mie voids, a high-resolution light-emitting display is realized with a pixel size of ∼1.12 μm. Our work opens a door to nanoscale 2D semiconductor light sources with potential applications in a high-resolution light-emitting display.
Liao et al. (Fri,) studied this question.