ABSTRACT The current study explores the effect of Gaussian white noise on the features of the photoionization cross‐section (PCS) of GaAs quantum dot (QD) doped with Gaussian impurity. The PCS profiles have been analyzed as a function of the impinging photon energy when different physical parameters vary over a range. The overall outcomes of the study reveal subtle interplay between incident photon energy, applied noise, the mode of inclusion of noise, and the particular physical quantities undergoing variation. Furthermore, the strength and parity of the anharmonic potential present inside QD confinement also affect the PCS profiles. The study unveils noise‐induced enhancement and depletion of PCS in comparison with the noise‐free state and importance of mode of entry of noise on the features of the PCS plots. The findings could bear significance in the applications of QD‐based opto‐electronic devices.
Bhakti et al. (Sat,) studied this question.