Контактное Сопротивление, Нормальная Монохроматическая Излучательная Способность И Удельное Электрическое Сопротивление Карбида Кремния При Температурах 800–1400 К

Key Points

• This research aims to measure the contact resistance and electrical properties of silicon carbide across a temperature range.
• Conducted comprehensive experiments on silicon carbide properties.
• Measured electrical resistance using a stationary contact surface.
• Utilized normal monochromatic emissivity at a wavelength of 1 µm.
• Heated samples by passing a constant electrical current (10–50 A).
• Performed tests under conditions similar to industrial resistance furnaces.
• Identified specific contact electrical resistance under varied temperatures.
• Delivered data on monochromatic emissivity at 1 µm wavelength.
• Demonstrated the behavior of silicon carbide under operational conditions.