Optoelectronic synaptic devices based on solution-processed microcrystal indium gallium zinc oxide for neuromorphic computing and visual perception

Key Points

• The aim is to explore how varying the proportions of indium, zinc, and gallium in indium gallium zinc oxide (m-IGZO) affects photoelectric synaptic functions.
• Adjustment of indium, zinc, and gallium proportions in m-IGZO devices.
• Testing device performance for visual perception and memory tasks.
• Evaluation of response times for different device compositions.
• Indium-rich devices enhance visual perception and memory performance.
• Gallium-rich devices exhibit faster responses suitable for short-term memory tasks.
• Gallium-rich devices are effective for ultraviolet communication applications.