Sub-5-nm one-dimensional post-transition-metal monochalcogenide gate-all-around MOSFETs

Key Points

• The research aims to explore the quantum-transport characteristics of sub-5-nm gate-all-around MOSFETs.
• Conducted a first-principles quantum-transport analysis of GAA MOSFETs
• Examined the electrostatic control efficiency
• Investigated the use of post-transition-metal monochalcogenides
• Demonstrated improved electrostatic control compared to traditional MOSFET designs
• Identified effective scaling potential for future devices
• Highlighted the advantages of using post-transition-metal materials