Preparation of high-purity Ga₂O₃ by urea/ammonia-induced crystallization of GaOOH and its thermal conversion

Key Points

• The aim is to prepare high-purity gallium oxide by using GaOOH as an intermediate and optimizing crystallization methods.
• Utilized urea/ammonia-induced crystallization for GaOOH preparation.
• Conducted thermal conversion to transform GaOOH to Ga2O3.
• Analyzed purity levels of Ga2O3 produced through the proposed method.
• Achieved high-purity Ga2O3 suitable for semiconductor applications.
• Demonstrated effective crystallization techniques enhancing material quality.