Realising thermally stable, one‐step‐grown InAs/GaAs quantum dot (QD) lasers on standard Si (001) is pivotal for cost‐effective and streamlined monolithic Si photonics. However, current state‐of‐the‐art solutions predominantly rely on hybrid growth schemes using virtual substrates, which introduce high costs and limit scalability. Here, we report thermally reliable, high‐performance QD lasers directly integrated on V‐grooved Si (001) substrates using a one‐step all‐molecular beam epitaxy (MBE) approach. By preserving V‐groove structural integrity and employing improved facet quality and cavity geometry optimisation, a significant enhancement in high‐temperature operation is realised. The as‐cleaved 5 × 2000 µm 2 device exhibits a room‐temperature threshold current of 42 mA and sustains lasing up to 150°C under pulsed injection, comparable to state‐of‐the‐art hybrid devices utilising facet coatings. Continuous‐wave operation is achieved up to 70°C with a room‐temperature threshold current of 73 mA. These results demonstrate the viability of the one‐step, all‐MBE V‐groove approach for realising thermally reliable, cost‐effective, and scalable monolithic light source on Si photonics platforms.
Li et al. (Fri,) studied this question.