An energy-efficient NbO x /ZrO 2 bilayer memristor enabling low-voltage multilevel switching for neuromorphic computing

Key Points

• This research aims to develop an energy-efficient memristor for neuromorphic computing applications.
• Designed a NbO/ZrO₂ bilayer structure for enhanced performance.
• Evaluated the switching behavior under low-voltage conditions.
• Conducted tests to assess energy efficiency and multilevel switching capabilities.
• Demonstrated effective multilevel switching at low voltage.
• Achieved significant energy savings compared to conventional devices.
• Showed potential for use in artificial intelligence applications.