Investigation Of Electrical Characteristics, Voltage-Dependent Interface States, And Series Resistance of Au/AgNiO/n-Si Structures Using Low-High Frequency Capacitances

The study in question analyzed the electrical characteristics of the Au/AgNiO/n-Si structure utilizing capacitance (C) and conductance measurements (G/ω) in a wide voltage range of -3V/4V by 50 mV steps at low (0.5 kHz) and high (500 kHz) frequencies at room temperature. Experimental results indicate that each of the C and G/ω are quite change on frequency and voltage due to the presence of series resistance (Rs), the interface states (Nss), and the (AgNiO) interfacial layer. Therefore, while the voltage-dependent curves of Nss and Rs were extracted from the measured low-frequency and high-frequency C-V plots by using the low-high frequency capacitance method developed by Castangé Vapaille and Nicollian Brews methods, respectively. The Nss vs V graph shows a clear peak at about 2V due to a special density distribution of Nss that depends on their relaxation time (). Several key electrical parameters, including the doping donor atoms (Nd), potential of diffusion (Vd), energy of Fermi (EF), barrier height (Φb), depletion layer width (WD), were calculated from the intercept and slope of the reverse bias C−2-V graphs at 500 kHz. To see the effect of Rs on the C and G/, their voltage-dependent profile was corrected. The results gathered suggest that the produced Au/AgNiO/n-Si structure can be successfully used instead of metal/oxide/semiconductor devices in applications.