A sol gel spin coated Zinc Oxide (ZnO) based memristive device was fabricated and Investigated for its memristive behavior. In this paper, the effect of spin speed and different structure of the memristor were studied. Two type of memristor structures were fabricated; vertical and lateral structures. In vertical structure, the ZnO layer was sandwiched between two Pt metal layers on the top and bottom, while in lateral structure, the ZnO layer was sandwiched by Pt metal layers on both sides, to form the metal.insulator-metal (MIM) configuration of a typical memrlstor. Each structure was fabricated by sol-gel spin coating method while varying the spin speed from 2500 rpm to 3500 rpm. We found the suitable method to fabricate the lateral-MIM structure by which the resistive switclling behavior of ZnO thin film was observed.
Norain Osman (Mon,) studied this question.