Multiscale modeling of area-selective atomic layer deposition of SiO2 on Al2O3 and SiO2 surfaces with intermediate etching steps

Key Points

• Area-selective atomic layer deposition enhances material properties across varying surface types, contributing to better performance.
• The study demonstrates that etching processes influence the deposition of SiO2 on Al2O3 surfaces with intermediate steps, affecting efficiency.
• Conducted using multiscale modeling techniques, the analysis explores the intricate interactions involved in the deposition process.
• Optimizing these processes may enable the development of advanced materials, emphasizing the need for further exploration beyond current limits.