Competition between intrinsic and defective luminescence in GaN microdisks under nanoindentation

Key Points

• Intrinsic luminescence dominates when GaN microdisks are undisturbed, but this changes under nanoindentation, impacting overall luminescent behavior.
• Findings indicate a significant shift in luminescence intensity, measuring a 30% decrease in intrinsic luminescence compared to defective luminescence under stress.
• Assessment using nanoindentation experiments revealed varying optical properties influenced by luminescence competition in GaN microdisks.
• This highlights the need for careful consideration in applications requiring stable luminescence, particularly under mechanical stress.