MHz burst-mode femtosecond laser slicing of n-type 4H-SiC wafer: From initiating to propagating cracks

Key Points

• Crack propagation occurs during femtosecond laser slicing of n-type 4H-SiC wafers, enhancing understanding of material behavior.
• Key evidence indicates a significant relationship between burst-mode laser operation and crack formation dynamics.
• Assessment using advanced laser slicing techniques reveals that the control of laser parameters influences defect development.
• These findings highlight the potential for optimized laser slicing methods to improve the fabrication process of semiconductor materials.