The active electrode material plays a crucial role in resistive switching (RS) in memristors by the mechanism of electrochemical metallization (ECM). This affects the rate of formation/destruction and the shape of the conductive filament formed from the atoms of the active electrode penetrating into the dielectric layer, which, in turn, affects the type and stability of RS. One of the promising materials for memristors with ECM are nanocomposites based on poly-p-xylylene (PPX). The difference in the RS and synaptic properties of memristors based on PPX nanocomposite with molybdenum oxide nanoparticles with copper and silver active electrodes is studied.
Trofimov et al. (Mon,) studied this question.