Epitaxial growth technology has drawn widespread attention in the field of perovskites because of its notable success in producing high-quality crystals with preferred orientations and superior photoelectric properties, which enable the material combinations with a coherent interfacial lattice as well as complementary functionalities. Besides, the minimized structural defects benefit from the lattice coherence, and the adjustable residual strain level could profoundly impact the energy conversion performance of perovskite epitaxial structures and their assembled devices. In this perspective, we summarize the lattice-matched epitaxy of perovskite solids categorized by the combined materials and demonstrate their lattice-matched schemes as well as the performance in various devices. Finally, we outline future directions for perovskite epitaxy, focusing on precise interfacial structure characterization and scaling up fabrications. These advancements have the potential to further enhance the performance and applications of perovskite-based devices.
Wáng et al. (Tue,) studied this question.