In this paper we introduce an approach to increase density of p-n-heterojunctions in the framework of a multilevel inverter with R-load. In the framework of the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.
Evgeniya Sergeevna Pankratova (Tue,) studied this question.
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