ABSTRACT High‐resolution printing offers promising avenues for packaging micro‐ and nanoscale modular electrical components, enabling hybrid, high‐performance circuits. The miniaturization of component interfaces imposes stringent requirements on printed interconnect resolution, conductivity, and structural robustness. This work systematically investigates the fabrication and characterization of submicron‐to‐micron scale (300 nm–3 ) metal nanoparticle interconnects, focusing on the interplay between printing parameters, multilayer deposition, and thermal sintering conditions. Silver (Ag) and gold (Au) colloidal inks are printed with controlled cross‐sectional geometries and sintered under dry air, forming gas, and nitrogen atmospheres. Correlations between geometry, sintering atmosphere, and interconnect resistivity reveal that oxygen‐rich and reducing environments promote nanoparticle coalescence, while resistivity and long‐term stability are strongly dependent on cross‐sectional area. Optimized processing yields Au interconnects with widths down to and resistivity of . Integration with micromodular transistor circuits demonstrates that interconnect geometry and device interface quality strongly influence series resistance, and analysis of failure modes identifies strategies to improve reliability. These results establish a framework for designing electrically robust, high‐resolution printed interconnects, enabling reliable integration into next‐generation microelectronic packaging and hybrid interconnection technologies.
Yue et al. (Fri,) studied this question.