Two-dimensional reduced graphene oxide as high-efficiency hole injection layer for quantum dot light-emitting diodes | Synapse
March 14, 2026Open Access
Two-dimensional reduced graphene oxide as high-efficiency hole injection layer for quantum dot light-emitting diodes
Key Points
To evaluate the performance of reduced graphene oxide as a hole injection layer in quantum dot light-emitting diodes.
Developed rGO-based quantum dot light-emitting diodes (QLEDs) with specified characteristics.
Compared performance metrics such as turn-on voltage and maximum luminance against PEDOT:PSS-based devices.
Achieved a turn-on voltage of 2.0 V.
Maximized luminance of 120,000 cd m −2.
Resulted in an external quantum efficiency (EQE) of 11.74%, comparable to PEDOT:PSS-based devices.
Abstract
rGO-based QLEDs achieve excellent performance (2.0 V turn-on voltage, 120 000 cd m −2 maximum luminance, 11.74%EQE), on par with same-batch PEDOT:PSS-based devices.