This paper presents the results of fabricating ferroelectric LaSrMnO (LSMO) thin films on silicon substrates. Oriented LSMO films were obtained using magnetron sputtering followed by annealing. Capacitance-voltage (C–V) measurements of the Ni-LSMO-Si metal-insulator-semiconductor (MIS) structures revealed that thermal treatment at 800 °C induces ferroelectric properties in the LSMO films. This is evidenced by a C–V hysteresis loop with a width of 5 V and a more than two-fold increase in the capacitance switching ratio. The demonstrated method shows promise for the integration of ferroelectric LSMO into silicon technology.
Luzanov et al. (Wed,) studied this question.