ABSTRACT In this study, TCAD simulation is employed to model the Indium Phosphide High Electron Mobility Transistor (InP HEMT) device. Using Sentaurus, we simulate the transfer characteristics, transconductance curves, output characteristics, and S‐ parameters of the device with variations in barrier thicknesses and spacer thicknesses. Based on these simulations, we further discuss the underlying mechanisms by which barrier thickness and spacer thickness influence the electrical characteristics of HEMT devices. The results demonstrate that variations in both barrier thickness and spacer thickness affect the transfer characteristics and output characteristics of the device, and also induce variations in S‐ parameters.
Wei et al. (Sun,) studied this question.