Nucleation and Antiphase Twin Control in Bi 2 Se 3 via Step‐Terminated Al 2 O 3 Substrates (Adv. Funct. Mater. 22/2026)

Key Points

• The study aims to understand how atomic step edges affect the growth of Bi2Se3, a topological material.
• Examined the growth of Bi2Se3 on step-terminated Al2O3 substrates.
• Utilized molecular beam epitaxy for material deposition.
• Analyzed defect suppression and crystallographic influences due to step edges.
• Atomic step edges effectively guided Bi2Se3 growth, minimizing defects.
• New material properties emerged as a result of controlled nucleation.
• Topological aspects of the material were enhanced through optimized growth conditions.