The morphology and structure of thin films were studied during the deposition of Au+Ge on the GaAs surface by thermal evaporation in a vacuum in order to create metal-semiconductor contacts with a reduced barrier height. It was found that the addition of germanium to the evaporated sample ensures the formation of a layer, doped with donors and prevents the transformation of GaAs into a hexagonal structure.
Bryantseva et al. (Wed,) studied this question.