What question did this study set out to answer?

The study aims to develop a method for quickly assessing the quality of silicon epitaxial structures used in avalanche photodiodes.

March 26, 2026

Express Analysis for Heterostructures Quality

Key Points

The study aims to develop a method for quickly assessing the quality of silicon epitaxial structures used in avalanche photodiodes.
Proposed a novel method for express assessment of Si structure parameters
Utilized SAM architecture for evaluation
Conducted electro-optical tests to measure structure characteristics
Compared real characteristics with simulated results
Developed models for verifying the silicon heterostructure quality
Successfully grew a Si heterostructure
Real characteristics matched well with simulated results

Abstract

The paper proposes an Innovative method for express assessment of the Si epitaxial structure parameters with SAM (substrate, absorption, and multiplication) architecture for avalanche photodiodes (APD) is discussed in the paper. Finally, a Si heterostructure was grown, models for verification were developed, electro-optical tests were carried out to assess the characteristics of the epitaxial structure and real characteristics were compared with simulated results.

Express Analysis for Heterostructures Quality

Key Points

Abstract

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