In the present paper, we investigate the effect of initial stress on thermoelastic waves induced by pulsed lasers, interaction between electrons and holes on semiconductor materials under the hall current and electro-magnetic field. Photo-elastic and photo-electronics deformations are taken into account when the hall current impact appears due to the magnetic field pressure on the semiconductor medium. The novelty of this work lies in formulating a new coupled dynamic model that integrates photothermal, mechanical stresses and carrier density with temperature interactions in an elastic semiconductor medium. The normal mode analysis method is applied to solve the resulting coupled differential equations, obtaining both deterministic and holes solutions. The temperature, carrier density, hole charge carrier concentration, displacement component and normal stress of these waves are obtained analytically with the use of suitable boundary conditions. Focusing on silicon (Si) material, graphical representations of numerically simulated findings using MATHEMATICA software show how hall current, laser pulse, initial stress affect the results. Additionally, GL, LS, and CTE theories are compared. The effects of initial stress, electromagnetic field and thermal on the physical quantities are examined. The variance of the quantities about their mean was illustrated numerically and graphically.
K. K. Alarfaj (Wed,) studied this question.