Reliability Design Method Analysis for Crystal Defect Expansion of Next-generation Power Devices based on Combined Phase-Field method and FEM

SiC bipolar devices, as a representative of next-generation power devices, concerns over the increase in electrical resistance as single Shockley stacking faults (SSFs) expand, depending on the device design. Since the SSF expansion depends on multiphysical aspects including electrical, thermal, and stress states, the analysis and evaluation methods for the packaging structure of power modules are important for reliability design of power modules. We propose a reliability design method that uses the probability of SSF expansion as an indicator. It depends on the combines method with multiphysical finite element method (FEM) analysis accounting for electrical, thermal, and stress conditions and with a phase field (PF) model based on time-dependent Ginzburg-Landau (GL) equations. Estimating the probability of SSF expansion rate on the response surface under the mutiphysical inputs from FEM, the proposed reliability design method can be used effectively in the design process by changing the various design variables including distribution.