This study investigates the peeling behavior of thin semiconductor chips during the laser transfer process for high-speed placement of chips thinner than 100 μm. A three-layer model consisting of chip, release layer, and glass substrate was analyzed using finite element simulation with a cohesive zone model (CZM). Material properties of both chip and release layer, including elastic and plastic behavior, were incorporated. Laser irradiation was modeled as transient load applied at the chip center or corner. Central loading reproduced the experimental detachment diameter, while corner loading initiated later but propagated more rapidly, resulting in a larger final peeling length. Although quantitative differences remained, the analysis successfully captured the experimental trends. The proposed approach provides useful insights for optimizing material properties included adhesive conditions and loading conditions, and contributes to the development of efficient, low-damage transfer processes for thin chips.
SHIMIZU et al. (Wed,) studied this question.