This work is aimed at solving the problem of increasing the accuracy of thin-film resistors. The main cause of this problem is the uncontrolled change in the resistance of resistors over time and under the influence of temperature, which makes it difficult to achieve better resistance stability. To solve this problem, it is proposed to use compensation layers with temperature coefficients of resistance of different signs. A design and technological solution has been developed for ultra-precision multilayer and combined thin-film resistive structures with temperature self-compensation made of metal-silicide alloys and nichrome-based alloys, as well as from K-30S cement and nickel, respectively. The choice of combining films made of Kh20N75Yu alloy and K-30S cements is due to the selection of the ratio of layer thicknesses. The structure and topology of combined and multilayer thin-film resistors have been developed. A technological process for manufacturing thin-film chip resistors has been developed, deposition modes and obtaining topology by photolithography with subsequent temperature stabilization have been worked out. Functional tests of a pilot batch of samples have been carried out, for which technological equipment has been additionally developed. The developed technology makes it possible to achieve a temperature coefficient of resistance of ±5 × 10 °C in the operating temperature range from -60 to +125°C. The scientific novelty of the work lies in the possibility of combining thin films Kh20N75Yu/K-30S for multilayer and K-30S/Ni for combined resistive structures in the proposed design in order to achieve temperature compensation and improve stability indicators.
Pecherskaya et al. (Wed,) studied this question.