Fluorite ferroelectrics are exciting candidates for next-generation non-volatile memory devices because their unique ferroelectric mechanism, which arises from unconventional oxygen displacements, permits ferroelectricity with minimal thickness constraints. However, the polarisation switching mechanism remains the subject of intense debate due to a limited understanding of the atomic-scale dynamics which are extremely challenging to detect and measure. Here, we observe directly the polarisation switching pathways by visualising oxygen site dynamics in ZrO2 and Hf0.5Zr0.5O2 freestanding membranes using an advanced atomic-column imaging technique—optimum bright-field scanning transmission electron microscopy. We observe that the 180° and 90° polarisation pathways involve different nonpolar intermediate states with distinct spatial scales. Coupled with density functional theory, we also reveal how different cation species in fluorite oxides impact the accessible polarisation switching pathways. Our atomic-level insights into the polarisation switching dynamics open new avenues for the advanced engineering of fluorite ferroelectric materials and resulting memory devices. This study reveals how atoms move during polarization switching in ultrathin fluorite ferroelectrics, showing cation-dependent pathways that help explain and improve next-generation memory materials.
Ooe et al. (Mon,) studied this question.