The application of 3D crosspoint memory for low‐power and high‐density data storage relies critically on ovonic threshold switching (OTS) selector devices. To address the requirements of low leakage current and high thermal stability, Ge 20 As 28 Se 48 Te 4 (GAST) chalcogenide alloys are investigated as OTS selector materials by synergistically integrating the excellent switching characteristics of GeTe, the enhanced thermal stability of GeSe–GeTe systems and As incorporation. The GAST‐based OTS devices exhibit outstanding thermal stability (retaining functionality after annealing at 400°C for 30 min), ultralow off‐state current, fast switching speeds, and robust endurance exceeding 10 8 switching cycles. Raman spectroscopy and X‐ray photoelectron spectroscopy reveal annealing‐induced local structural rearrangements and bonding evolution without macroscopic crystallization. First‐principles calculations further corroborate these observations, showing enhanced short‐range order in the radial distribution functions and a stable electronic density of states upon annealing. These experimental and theoretical results elucidate the excellent thermal stability and reliable switching behavior, providing valuable insights for the design of highly reliable OTS selectors for advanced 3D crosspoint memory applications.
Huang et al. (Sun,) studied this question.
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