Advances in Indium Antimonide Materials and Devices: Synthesis, Engineering, and Emerging Applications

Indium antimonide (InSb) represents a typical and strategically important III–V narrow‐bandgap semiconductor, distinguished by its exceptional electron mobility, narrow direct bandgap, and pronounced mid‐infrared photoresponse. These intrinsic properties render it highly suitable for advanced applications in infrared photodetection, terahertz instrumentation, and quantum‐enabled devices. This review delivers a comprehensive and systematic overview of recent developments in InSb material technology. It critically examines prevailing epitaxial and chemical synthesis techniques, notably metal–organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and electrochemical deposition (ED)—addressing both their methodological advantages and inherent limitations. Emphasis is placed on contemporary strategies for enhancing the functional characteristics of InSb, including defect passivation, elemental doping (e.g., Bi, La, Ga), crystal structure design (e.g., twin boundary engineering, superlattice design), and nanocomposite integration which collectively contribute to the optimization of its thermoelectric, mechanical, and optical performance. Furthermore, the article surveys the deployment of InSb‐based architectures in state‐of‐the‐art devices such as infrared focal plane arrays, terahertz absorbers, and high‐sensitivity biosensing platforms. In conclusion, we discuss prevailing technical challenges and propose promising research trajectories aimed at refining synthesis protocols, implementing multidimensional property modulation, and extending the utility of InSb into emerging interdisciplinary domains—including quantum information processing, biomedical imaging, and sustainable resource exploration.