High-performance resistive random access memory is a key enabling technology for next-generation nonvolatile memory. In particular, self-rectifying resistive-switching devices are promising for suppressing sneak-path currents in crossbar arrays and have therefore attracted considerable attention. Here, we report a simple Au/LaCrO3/n-Si trilayer device fabricated using a low-cost, solution-processed switching layer. The device exhibits reproducible bipolar resistive switching along with intrinsic self-rectifying behavior, delivering a clear On/Off ratio, a pronounced rectification ratio, and stable retention characteristics. The resistive switching is attributed to carrier trapping/detrapping associated with oxygen vacancies at the p-LaCrO3/n-Si interface, while the self-rectifying behavior originates from the Schottky-like barrier formed at the same interface. These results highlight the potential of the Au/LaCrO3/n-Si trilayer structure for low-cost, high-density memory on Si-based platforms.
Cheng et al. (Tue,) studied this question.