Recently 3D magnetic memory using artificial ferromagnets has been proposed as a high-performance memory. However, the interaction among ferromagnetic layers due to stray fields is thought to be a problem for further development of high-density memory. Here, we propose the use of synthetic antiferromagnets to solve the stray field problem. We show that stable bit shifting in 3D memory using SAF is possible by micromagnetic simulation.
Jang et al. (Thu,) studied this question.