High-Gain AlInAsSb SACM Avalanche Photodiode for SWIR Detection at Room Temperature

We report the design, epitaxial growth, and room-temperature operation of a high-gain AlInAsSb-based avalanche photodiode (APD) for short-wavelength infrared (SWIR) detection at 1.55 µm. The device employs SAGCM structure to confine the electric field within the multiplication region while suppressing dark current. High-quality AlInAsSb layers were grown on GaSb substrates by molecular beam epitaxy using a digital alloy approach, achieving excellent surface morphology (Ra < 0.2 nm) and uniform superlattice periodicity. Electrical characterization reveals a well-defined breakdown voltage near −17 V and a peak internal multiplication gain of 200 at 300 K under 0.2 mW illumination at 1550 nm—among the highest gains reported to date for antimonide-based APDs operating at room temperature. Variable-temperature dark current analysis indicates a transition from tunneling-dominated to thermally generated dark current as temperature increases from 100 K to 300 K. These results demonstrate the strong potential of AlInAsSb SAGCM APDs for eye-safe, high-sensitivity applications in LIDAR, free-space optical communication, and low-light SWIR imaging.