X-ray techniques provide powerful, non-destructive tools for structural characterization in semiconductor manufacturing and advanced packaging. Their strong penetration capability and sensitivity to multiple contrast mechanisms enable the investigation of lattice structure, strain, defects, interfaces, and elemental distribution across a wide range of length scales. As semiconductor devices evolve toward three-dimensional architectures and heterogeneous integration, there is an increasing demand for characterization approaches capable of probing complex, buried, and multi-scale structures in a consistent manner. In this review, we present a systematic overview of X-ray characterization techniques for advanced semiconductor systems, including diffraction-based methods, small-angle scattering, computed tomography, X-ray fluorescence, and spectroscopic approaches. These techniques are discussed in terms of the type of structural, morphological, and compositional information they provide, their applicable length scales, and their strengths and limitations in addressing key challenges such as thin films, high-aspect-ratio structures, buried interfaces, and full wafers. Particular attention is given to the complementary nature of different X-ray modalities and their roles in addressing practical metrology problems. The limitations associated with resolution, model dependence, and data interpretation are also outlined. Finally, emerging opportunities in laboratory X-ray sources, synchrotron-based methods, and integrated characterization strategies are briefly discussed. This review aims to provide a unified perspective for understanding and integrating X-ray techniques, offering insights into their roles in addressing the growing complexity of next-generation semiconductor devices.
Jiang et al. (Tue,) studied this question.