Outstanding optical and electronic properties of indium arsenide ( InAs ) as III–V semiconductor (high refractive index, high electron mobility, direct and narrow energy bandgap, low free‐carrier relaxation time, and high Kerr nonlinear coefficient) make it an attractive material for designing nanoscale, ultrafast, nonlinear, high index contrast, multi‐layered, planar‐rectangular hybrid plasmonic waveguides (HPWs) working in the (3.55–4.55 μm) mid‐IR spectrum range at room temperature. Moreover, the remarkable optical and electronic properties of 2D‐graphene thin layers acting as semimetal‐like material through electrical driving in a multilayered structures open the possibility of total replacement of noble‐metal layer counterparts (like Ag or Au) with the advantage of avoiding the high power dissipation loss inherent to the latter. In this work, two generic configurations of hybrid nonlinear plasmonic waveguides based on InAs/2D‐graphene/SiO 2 or InAs/SiO 2 /2D‐graphene multilayer platforms, respectively, have been designed (configuration #1: monolayer 2D‐graphene and configuration #2: bilayer 2D‐graphene). Based on a prior theoretical model and numerical electromagnetic analysis of designed structures, their main optical parameters have been obtained and, then, satisfactorily confirmed by computational simulation tools (full‐vectorial 3D‐FDTD), with significant agreement (hybrid TM‐mode propagation, propagation constant, effective refractive index, effective mode area, confinement factor, propagation loss, propagation length, and Kerr nonlinear coefficient). To our knowledge, this is the first time that such a material platform has been studied for photonic integrated circuits (PIC) applications. Based on this kind of waveguide, one ultra‐compact all‐pass microring resonator (AP‐MRR) with favorable performance (Q‐factor, free spectral range, full width at half maximum, extinction ratio) was designed which could serve as building block for all‐optical, ultrafast, nanoscale, switching/modulation signal processing devices.
Pena et al. (Wed,) studied this question.