defects by eliminating the deep trapping state, stabilizing the lattice and reducing nonadiabatic coupling to 0.30 meV. This passivation enhances the carrier lifetime by 2-3 orders of magnitude, ultimately reaching 87 ns. Our findings establish a map of oxidation-state-dependent recombination for hydrogen interstitials and provide atomistic insights for developing defect passivation strategies for high-performance perovskites.
Huang et al. (Wed,) studied this question.