This paper presents a novel architecture for two‐input and three‐input AND logic gates based on an optical metal–oxide‐semiconductor field‐effect transistor (OMOSFET) utilizing a silicene waveguide encapsulated between hexagonal boron nitride (h‐BN) layers. The key innovation lies in pulse‐shaped gates with nonuniform dielectric thicknesses (10 nm and 20 nm), which create a gate‐position‐dependent threshold voltage that inherently implements AND logic without complex cascaded structures. Numerical modeling using the finite element method, based on silicene's optical conductivity derived from the Kubo formalism, demonstrates operation at 10.178 THz with a perpendicular electric field of 1 V/nm. The device achieves an infinite contrast ratio (CR = ∞) and ultra‐low insertion loss of 0.03 dB—a significant advancement over existing optical logic platforms. Physical analysis reveals the switching mechanism as a guided‐mode to leaky‐wave transition governed by the sign change of silicene's imaginary conductivity. The device features zero static power consumption due to the electrically isolated gate and occupies an ultra‐compact footprint of 0.15 µm 2 (94% area reduction versus photonic crystal designs). Critical fabrication challenges, including silicene's ambient instability, are addressed through proposed in situ encapsulation and van der Waals assembly strategies. This work establishes a foundation for ultra‐low‐power optical integrated circuits compatible with heterogeneous CMOS integration.
Emami‐Nejad et al. (Tue,) studied this question.