Coexistence of the quantum anomalous Hall and anomalous Nernst effects in Cr-doped NaMgX (X = P, As, Sb) monolayers

Key Points

• The aim is to explore the coexistence of the quantum anomalous Hall effect and the anomalous Nernst effect in a specific material system.
• Investigated Cr-doped NaMgX monolayers (X = P, As, Sb) for their electronic properties.
• Analyzed the potential for multifunctional quantum device applications.
• Demonstrated the simultaneous presence of quantum anomalous Hall and anomalous Nernst effects in Cr-doped monolayers.
• Found that this integration enhances the functionality and efficiency of quantum devices.