Experimental method for determining the atomistic details of the quantum-well interface

Key Points

• This work aims to investigate the atomistic details of quantum-well interfaces in Si/SiGe systems.
• Conducted Hall-bar measurements on Si/SiGe quantum wells.
• Measured carrier-density and mobility.
• Analyzed Shubnikov–de Haas oscillations and the anomalous Hall response.
• Observed significant Shubnikov–de Haas oscillations indicating quantized energy levels.
• Determined carrier density and mobility values, suggesting efficient charge transport.
• Estimated valley-splitting, indicating potential applications in quantum computing.